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Global Gate-All-Around FET (GAAFET) Technology Market Size By Type (3nm, 2nm), By Application (Consumer Electronics, Inverter & UPS), By Geographic Scope And Forecast


Published on: 2024-08-08 | No of Pages : 320 | Industry : latest updates trending Report

Publisher : MIR | Format : PDF&Excel

Global Gate-All-Around FET (GAAFET) Technology Market Size By Type (3nm, 2nm), By Application (Consumer Electronics, Inverter & UPS), By Geographic Scope And Forecast

Gate-All-Around FET (GAAFET) Technology Market Size And Forecast

Gate-All-Around FET (GAAFET) Technology Market size was valued at USD 25,732.33 Thousand in 2023 and is projected to reach USD 1, 35,816.77 Thousand by 2030, growing at a CAGR of 31.95% from 2024 to 2030.

Enhancing breakdown voltage in gate-all-around fet (gaafet) technology and minimized energy losses are the factors driving market growth. The Gate-All-Around FET (GAAFET) Technology Market report provides a holistic evaluation of the market. The report offers a comprehensive analysis of key segments, trends, drivers, restraints, competitive landscape, and factors that are playing a substantial role in the market.

Global Gate-All-Around FET (GAAFET) Technology Market Definition

Gate-All-Around Field-Effect Transistor (GAAFET) is a type of transistor technology that represents a significant advancement from traditional FinFET (Fin Field-Effect Transistor) technology in semiconductor manufacturing. In a GAAFET, the gate material completely surrounds the channel, providing better control over the flow of electrons. This differs from FinFET technology, where the gate only partially surrounds the channel. This unique design offers several advantages

  • Improved ControlGAAFETs offer better electrostatic control over the channel, reducing leakage and improving energy efficiency.
  • Reduced VariabilityThe all-around gate structure minimizes variations in transistor performance, leading to improved consistency and reliability.
  • Enhanced ScalingGAAFET technology allows for continued scaling down of transistor sizes, enabling the development of smaller and more powerful semiconductor devices.
  • Improved PerformanceGAAFETs can provide higher performance compared to traditional transistor technologies due to enhanced control and reduced variability.
  • Lower Power ConsumptionThe improved electrostatic control helps in reducing power consumption, making GAAFETs suitable for energy-efficient devices.
  • Scaling PossibilitiesGAAFETs enable further scaling of semiconductor devices, facilitating the development of smaller and more advanced electronics.

GAAFET technology is crucial for various applications in the semiconductor industry, including

  • Mobile DevicesThe improved energy efficiency and performance make GAAFETs suitable for mobile processors, contributing to longer battery life and faster processing speeds.
  • Data CentersIn high-performance computing applications, GAAFET technology can enhance the efficiency of data center processors.
  • Internet of Things (IoT)The small size and low power consumption of GAAFET-based devices are beneficial for IoT applications.

Major semiconductor companies involved in developing and implementing advanced transistor technologies includeIntel, Samsung, TSMC (Taiwan Semiconductor Manufacturing Company), GlobalFoundries, IBM. These companies often invest heavily in research and development to stay at the forefront of semiconductor technology.

The market penetration of GAAFET technology is influenced by factors such as research and development progress, manufacturing capabilities, and industry demand. Regional adoption may vary based on the concentration of semiconductor manufacturing facilities and technological innovation centers.

The integration of GAAFET technology with advanced materials is a focus area for researchers and manufacturers. This includes exploring new materials for the transistor channel and gate to further enhance performance and reduce power consumption. GAAFET technology is anticipated to play a crucial role in applications related to artificial intelligence (AI) and edge computing. The improved performance and energy efficiency of GAAFETs make them well-suited for handling the computational demands of AI algorithms in edge devices. The trend towards heterogeneous integration involves combining different materials and technologies on a single chip. GAAFETs can be part of this trend, contributing to the development of more versatile and efficient semiconductor devices. Semiconductor foundries, such as TSMC and GlobalFoundries, are likely to play a key role in the widespread adoption of GAAFET technology. Their involvement in manufacturing GAAFET-based chips for various clients could drive the technology’s acceptance across different industries.

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Global Gate-All-Around FET (GAAFET) Technology Market Overview

Modern semiconductor technology known as Gate-All-Around Field-Effect Transistor (GAAFET) technology has drawn a lot of industry interest because of its enhanced energy efficiency and performance. In contrast to conventional transistor architectures, GAAFETs have a design in which the gate encircles the whole channel, improving current flow control. Because of its architecture, GAAFET technology offers enhanced transistor performance, lower leakage current, and better scalability, making it a promising development for the semiconductor industry.

The market for GAAFET technology is anticipated to grow significantly as semiconductor manufacturers integrate this technology into their sophisticated manufacturing processes to meet the changing demands of diverse applications. The demand for high-performance and energy-efficient electronic devices is expected to continue rising. Technological developments, R&D efforts, and the growing demand for next-generation electronic devices across industries all have an impact on the market’s trajectory.

Global Gate-All-Around FET (GAAFET) Technology MarketSegmentation Analysis

The Global Gate-All-Around FET (GAAFET) Technology Market is segmented on the basis of Type, Application, and Geography.

Gate-All-Around FET (GAAFET) Technology Market, By Type

  • 3nm
  • 2nm

To Get a Summarized Market Report By Type-

Based on Type, the market is segmented into 3nm and 2nm. 3nm will account for the largest market share of 74.51% in 2024, with a market value of USD 19,174.21 Thousand and is projected to grow at the highest CAGR of 33.13% during the forecast period. 2nm will the second-largest market in 2024, will value at USD 6,558.12 Thousand in 2024; it is projected to grow at a CAGR of 28.15%.

Gate-All-Around FET (GAAFET) Technology Market, By Application

  • Consumer Electronics
  • Inverter & UPS
  • Energy & Power
  • Industrial System
  • Others

To Get a Summarized Market Report By Application-

Based on Application, the market is segmented into Consumer Electronics, Inverter & UPS, Energy & Power, Industrial System, and Others. Consumer Electronics will account for the largest market share of 43.15% in 2024, with a market value of USD 11,103.16 Thousand and is projected to grow at the highest CAGR of 37.40% during the forecast period. Inverter & UPS will the second-largest market in 2024, will value at USD 4,818.42 Thousand in 2024; it is projected to grow at a CAGR of 30.26%.

Gate-All-Around FET (GAAFET) Technology Market, By Geography

  • North America
  • Europe
  • Asia Pacific
  • Latin America
  • Middle East And Africa

Based on Geography, the Global Gate-All-Around FET (GAAFET) Technology Market is segmented into different regions which includes North America, Europe, Asia Pacific, Latin America, and Middle East And Africa. Asia Pacific will account for the largest market share of 34.83% in 2024, with a market value of USD 8,962.57 Thousand and is projected to grow at the highest CAGR of 32.57% during the forecast period. Rapid urbanization and the growing demand for consumer electronics have led to the growth of the market in the Asia-Pacific region. North America will the second-largest market in 2024, will value at USD 8,321.84 Thousand in 2024; it is projected to grow at a CAGR of 32.08%. The increasing demand for semiconductors in emerging technologies including AI, 5G, and IoT have fueled the growth of the market in the North America region.

Key Players

The “Global Gate-All-Around FET (GAAFET) Technology Market” study report will provide a valuable insight with an emphasis on the Global market. The major players in the market are Samsung Group, TSMC, and Intel. The competitive landscape section also includes key development strategies, market share, and market ranking analysis of the above-mentioned players.

Report Scope

Report AttributesDetails
Study Period

2020-2030

Base Year

2023

Forecast Period

2024-2030

Historical Period

2020-2022

Unit

Value (USD Thousand)

Key Companies Profiled

Samsung Group, TSMC, Intel.

Segments Covered
  • By Type
  • By Application
  • By Geography
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